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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU1508DX DESCRIPTION With TO-220F package High voltage High speed switching Built-in damper diode. APPLICATIONS For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage INCH Base current Collector-emitter voltage Emitter-base voltage ANG EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 1500 700 7.5 8 15 4 6 UNIT V V V A A A A W ae ae Collector current Collector current (peak) Base current (peak) Total power dissipation Junction temperature Storage temperature TC=25ae 35 150 -65~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU1508DX CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IE=600mA ;IC=0 IC=100mA ;IB=0;L=25mH IC=4.5A; IB=1.1A IC=4.5A; IB=1.7A VCE=rated;VBE=0 Tj=125ae VEB=7.5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=1V IF=4.5A 4 140 13 MIN 7.5 700 1.0 1.3 1.0 2.0 390 TYP. 13.5 MAX UNIT V V V V mA mA SYMBOL V(BR)EBO VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF CC DC current gain Diode forward voltage Collector output capacitance HAN INC SEM GE IE=0;f=1MHz;VCB=10V OND IC TOR UC 5.5 7.0 1.6 80 2.0 V pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BU1508DX SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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